Bipolar quantum corrections in resolving individual dopants in ‘atomistic’ device simulation
نویسندگان
چکیده
In ‘atomistic’ device simulation the resolving of discrete charges onto a fine-grained simulation mesh can lead to problems. The sharply resolved Coloumb potential can cause simulation artefacts to appear in classical simulation environments using Boltzmann or Fermi–Dirac statistics. Various methods have been proposed in an effort to reduce or eliminate such artefacts as the localisation of mobile carriers by sharply resolved Coulomb wells, however they have met with limited success. In this paper we present an alternative approach for handling discrete charges in drift diffusion ‘atomistic’ simulations by properly introducing the related quantum mechanical effects using the density gradient formalism for both electrons and holes. This eliminates the trapping of mobile charge in heavily doped regions of the device and the related artefacts in the simulated device characteristics. © 2004 Published by Elsevier Ltd
منابع مشابه
Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations
In ‘atomistic’ device simulation the resolving of discrete charges onto a fine grained simulation mesh can lead to problems. The sharply resolved coulomb potential can cause simulation artefacts to appear in classical simulation environments using Boltzmann or Fermi-Dirac statistics. Various methods have been proposed in an effort to reduce or eliminate artefacts such as the trapping of mobile ...
متن کاملIntrinsic Fluctuations in Sub 10-nm Double-Gate MOSFETs Introduced by Discreteness of Charge and Matter
We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed “atomistic” drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibra...
متن کاملIntegrated Atomistic Process and Device Simulation of Decananometre MOSFETs
In this paper we present a methodology for the integrated atomistic process and device simulation of decananometre MOSFETs. The atomistic process simulations were carried out using the kinetic Monte Carlo process simulator DADOS, which is now integrated into the Synopsys 3D process and device simulation suite Taurus. The device simulations were performed using the Glasgow 3D statistical atomist...
متن کاملModelling End - of - the - Roadmap Transistors
In this paper we present a methodology for statistical 3D simulation of end-of-theroadmap decananometre and nanometre scale transistors. The numerical simulation approach is based on the recently advanced density gradient formalism and captures both quantum confinement and source-to-drain tunnelling. We use our ‘atomistic’ device simulator to study intrinsic parameter fluctuations introduced by...
متن کاملRandom Telegraph Signal Amplitudes in Sub 100 nm (Decanano) MOSFETs: A 3D ‘Atomistic’ Simulation Study
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on th...
متن کامل